BS170 Logic Level N-Channel Mosfet

Specification:
Max Drain-Source Voltage (VDSS) 60 V
Max Gate-Source Voltage (VGSS) ± 20 V
Drain Current (ID)
Max Continuous-Drain Current 500 mA
Max Pulsed-Drain Current 1200 mA
Gate Threshold Voltage (VGS(th)) 2.1V
Drain-Source Breakdown Voltage (BVDSS) 60V
Drain-Source On-Resistance (RDS(ON)) 1.2 Ω
MOSFET Polarity N-Channel
Maximum Operating Temperature (TJ) +150°C
Power Dissipation (Pd) 830 mW
Package TO-92-3
Brand Fairchild Semiconductor
Channel Mode Enhancement
Dimensions:
Length 4.5mm (0.18″)
Width 3.5mm (0.14″)
Height 4.6mm (0.18″)
Pin Length 14.5mm (0.57″)
Weight 0.56g (0.02oz)